27 August 2005 Toward hot-hole THz lasers in homoepitaxial Si and GaAs with layered doping
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Abstract
A recently proposed THz laser concept in homoepitaxially grown p-Ge with layered doping is reviewed. Prospects for realizing a similar design in Si or GaAs are considered.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. V. Dolguikh, M. V. Dolguikh, A. V. Muravjov, A. V. Muravjov, R. E. Peale, R. E. Peale, R. A Soref, R. A Soref, D. Bliss, D. Bliss, C. Lynch, C. Lynch, D. W Weyburne, D. W Weyburne, } "Toward hot-hole THz lasers in homoepitaxial Si and GaAs with layered doping", Proc. SPIE 5931, Nanoengineering: Fabrication, Properties, Optics, and Devices II, 593117 (27 August 2005); doi: 10.1117/12.617805; https://doi.org/10.1117/12.617805
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