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27 August 2005 Toward hot-hole THz lasers in homoepitaxial Si and GaAs with layered doping
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Abstract
A recently proposed THz laser concept in homoepitaxially grown p-Ge with layered doping is reviewed. Prospects for realizing a similar design in Si or GaAs are considered.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. V. Dolguikh, A. V. Muravjov, R. E. Peale, R. A Soref, D. Bliss, C. Lynch, and D. W Weyburne "Toward hot-hole THz lasers in homoepitaxial Si and GaAs with layered doping", Proc. SPIE 5931, Nanoengineering: Fabrication, Properties, Optics, and Devices II, 593117 (27 August 2005); https://doi.org/10.1117/12.617805
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