Epitaxial growth and transport properties of Nb-doped SrTiO3 thin &#64257;lms

K. S. Takahashi; D. Jaccard; K. Shibuya; T. Ohnishi; M. Lippmaa; J.-M. Triscone

doi:10.1117/12.616888

30 August 2005 Epitaxial growth and transport properties of Nb-doped SrTiO₃ thin films

K. S. Takahashi, D. Jaccard, K. Shibuya, T. Ohnishi, M. Lippmaa, J.-M. Triscone

Proceedings Volume 5932, Strongly Correlated Electron Materials: Physics and Nanoengineering; 59321K (2005) https://doi.org/10.1117/12.616888
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

Nb-doped SrTiO₃ epitaxial thin films have been prepared on (001) SrTiO₃ substrates using pulsed laser deposition. A high substrate temperature (>1000°C) was found to be necessary to achieve 2-dimensional growth. Atomic force microscopy reveals atomically flat surfaces with 3.9 Å steps. The films show a metallic behavior, residual resistivity ratios between 10 and 100, and low residual resistivity of the order of 10^-4Ωcm. At 0.3 K, a sharp superconducting transition, reaching zero resistance, is observed.

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K. S. Takahashi, D. Jaccard, K. Shibuya, T. Ohnishi, M. Lippmaa, and J.-M. Triscone "Epitaxial growth and transport properties of Nb-doped SrTiO₃ thin films", Proc. SPIE 5932, Strongly Correlated Electron Materials: Physics and Nanoengineering, 59321K (30 August 2005); https://doi.org/10.1117/12.616888

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