Novel organic photo FET using photo-sensitive gate dielectric layer

M. Yoshida; H. Kawai; T. Kawai; S. Uemura; S. Hoshino; T. Kodzasa; T. Kamata

doi:10.1117/12.614582

30 August 2005 Novel organic photo FET using photo-sensitive gate dielectric layer

M. Yoshida, H. Kawai, T. Kawai, S. Uemura, S. Hoshino, T. Kodzasa, T. Kamata

Author Affiliations +

Proceedings Volume 5940, Organic Field-Effect Transistors IV; 594003 (2005) https://doi.org/10.1117/12.614582
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

We fabricated a novel type photo-FET using poly(N-vinylcarbazole) as a photosensitive gate dielectric. For the photo-FET, photo-illumination to the PVK insulator layer make the field-effect mobility μ_FET two order of magnitude higher than dark condition. In particular, under blue-light illumination condition the on-off ratio was also a few ten times higher than dark condition. We concluded that the improvement of the transistor properties resulted from effective charge accumulation at the conductive channel by photo illuminations.

Citation Download Citation

M. Yoshida, H. Kawai, T. Kawai, S. Uemura, S. Hoshino, T. Kodzasa, and T. Kamata "Novel organic photo FET using photo-sensitive gate dielectric layer", Proc. SPIE 5940, Organic Field-Effect Transistors IV, 594003 (30 August 2005); https://doi.org/10.1117/12.614582

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