22 September 2005 Combined Raman spectroscopic and electrical characterization of the conductive channel in pentacene based OFETs
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Abstract
During the deposition of Pentacene on a Si-SiO2 gate structure with Au bottom contacts for source and drain, the film growth was monitored with simultaneous in situ macro Raman spectroscopy and drain current measurements of the OFET device. The deposition of the active layer was carried out under UHV conditions at a growth rate of 0.65 Å/min. The purpose of the in situ characterization was to determine the minimum nominal thickness of the Pentacene layer required for efficient charge transport through the OFET circuit. At a thickness around 1.5 nm nominal coverage, the first percolation paths through the first organic monolayer develop, resulting in a sharp rise of the drain current. Up to a nominal film thickness of 30 nm, a subsequent slower increase of the drain current can be observed, revealing that the percolation of the first monolayer continues on a slower pace up to rather thick organic layers. These in situ measurements were complemented by ex situ isothermal deep level transient spectroscopy (charge QTS).
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Beynor A. Paez S., Ilja Thurzo, Georgeta Salvan, Reinhard Scholz, Dietrich R. T. Zahn, H. von Seggern, "Combined Raman spectroscopic and electrical characterization of the conductive channel in pentacene based OFETs", Proc. SPIE 5940, Organic Field-Effect Transistors IV, 59400F (22 September 2005); doi: 10.1117/12.617511; https://doi.org/10.1117/12.617511
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