21 September 2005 Analysis of short-channel effects in organic field-effect transistors
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Abstract
We present a comprehensive study of short channel effects in organic field-effect transistors by measuring the electrical characteristics of devices with fixed channel width and varying channel length. Our studies are conducted on a p-type organic semiconductor, (E,E-2,5-bis-{4'-bis-(4''-methoxy-phenyl)amino-styryl}-3,4-ethylenedioxy-thiophene that is spin-coated from solution to form bottom contact organic field-effect transistors. Drain-source currents from transistors with a channel length of 50 μm show excellent agreement with the square law equations derived for crystalline Si MOSFETs in both the linear and saturation regimes. As the channel length is incrementally reduced to 1 μm, device characteristics such as saturation regime channel conductance, sub-threshold current and threshold voltage, behave in a manner similar to Si MOSFETs of decreasing channel length. Results of these studies indicate the presence of non-destructive current punch-through and in addition, both channel-length modulation and threshold-voltage roll-off, neither of which have previously been reported in OFETs.
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Joshua N. Haddock, Joshua N. Haddock, Xiaohong Zhang, Xiaohong Zhang, Shijun Zheng, Shijun Zheng, Seth R. Marder, Seth R. Marder, Bernard Kippelen, Bernard Kippelen, } "Analysis of short-channel effects in organic field-effect transistors", Proc. SPIE 5940, Organic Field-Effect Transistors IV, 59400H (21 September 2005); doi: 10.1117/12.615434; https://doi.org/10.1117/12.615434
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