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22 September 2005 Pentacene organic thin film transistors with anodized gate dielectric
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A low temperature high quality gate dielectric process for bottom gate organic thin film transistors (OTFT) is introduced which is compatible to plastic substrates. The Al2O3 dielectric is grown from the aluminum gate electrode by anodic oxidation at room temperature and exhibits an exceptionally good electrical performance even for thin layers of 50nm. Finding an electrolyte which significantly reduces dielectric charges was instrumental for the desired OTFT application. The electrolyte and substrate dependent behaviour was characterized and compared to different dielectrics to point out the advantages of anodic oxidized aluminum. The characteristics of pentacene bottom contact OTFTs realized with anodized Al2O3 gate dielectric on glass and plastic substrates are presented.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Silke Goettling, Jochen Brill, Norbert Fruehauf, Jens Pflaum, and Eduardo Margallo-Balbás "Pentacene organic thin film transistors with anodized gate dielectric", Proc. SPIE 5940, Organic Field-Effect Transistors IV, 594010 (22 September 2005);

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