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14 September 2005 Linearly polarized spontaneous emission from m-plane InGaN/GaN multiple-quantum-well LEDs
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InGaN/GaN multiple-quantum-well light-emitting diodes have been fabricated on the (1010) m-plane of 4H-SiC substrates. The c-axes of the m-plane epitaxial films and the substrate are parallel. The surface of the epitaxial films has a ridged texture with the ridges aligned perpendicular to the c-axis. Xray diffraction shows superlattice features from the multiple-quantum well stack, and plan-view transmission electron microscopy shows a threading dislocation density of ~ 1010 cm-2 and a basal plane stacking fault density of ~ 8 × 106 cm-1. The electroluminescence from the LED shows a strong polarization anisotropy with the majority of the light emitted perpendicular to the c-axis and a polarization ratio exceeding 0.8. The temperature dependence of the polarization ratio shows a 49 meV difference in energy gap between the valence band minima with different polarizations.
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Nathan F. Gardner, James C. Kim, Jonathan J. Wierer, Yu-Chen Shen, and Michael R. Krames "Linearly polarized spontaneous emission from m-plane InGaN/GaN multiple-quantum-well LEDs", Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59410J (14 September 2005);

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