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14 September 2005 Thermal design considerations in the packaging of GaN based light emitting diodes
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The temperature distribution of a dual Multi-Quantum Well (MQW) light emitting diode (LED) has been investigated using both infrared imaging and micro-Raman Spectroscopy; mean values over the device yielded temperatures ranging from 30-75°C. The InGaN/GaN based LED, grown by Metal Organic Chemical Vapor Deposition (MOCVD), was also studied using the 3ω method in order to determine an effective thermal conductivity of the MQW stack in the temperature range from 300-540K. The LED structure under investigation showed effective thermal conductivities in the range from 82-140 W/mK with the peak conductivity occurring at 440K, well above room temperature. Using temperature dependent properties determined experimentally, a numerical model of the LED structure was developed in order to study the effect that the package thermal resistance and input power has on the temperature of the device.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam Christensen, David Nicol, Ian Ferguson, and Samuel Graham "Thermal design considerations in the packaging of GaN based light emitting diodes", Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 594118 (14 September 2005);


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