6 December 2006 SiGe HBT and SiGe MOSFET analysis for high-speed optical networks
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Proceedings Volume 5944, Smart Imagers and Their Application; 594403 (2006) https://doi.org/10.1117/12.637771
Event: Smart Imagers and Their Application, 2004, Moscow, Russian Federation
Abstract
This paper provides a TCAD analysis of high performance SiGe heterostructure bipolar and MOSFET transistors fabricated by SiGe BiCMOS technology. The bipolar and MOSFET devices characteristics are presented. High values of operation frequencies, current gains and transconductances of the devices satisfy the requirements in RF mixed-signal IC development for wired optical communication systems.
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Konstantin O. Petrosjanc, Konstantin O. Petrosjanc, Nikita I. Ryabov, Nikita I. Ryabov, Rostislav A. Torgovnikov, Rostislav A. Torgovnikov, } "SiGe HBT and SiGe MOSFET analysis for high-speed optical networks", Proc. SPIE 5944, Smart Imagers and Their Application, 594403 (6 December 2006); doi: 10.1117/12.637771; https://doi.org/10.1117/12.637771
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