New contact stacks with platinum silicide layers

Dmitro Kolesnikov

doi:10.1117/12.637773

6 December 2006 New contact stacks with platinum silicide layers

Dmitro Kolesnikov

Proceedings Volume 5944, Smart Imagers and Their Application; 594404 (2006) https://doi.org/10.1117/12.637773
Event: Smart Imagers and Their Application, 2004, Moscow, Russian Federation

Abstract

The PtSi layer and PtSi/Al, PtSi/AlCuSi, PtSi / TiW / AlCuSi, Ti /Ni / Ag, Al / Ti / Ni / Ag stacks were tested as the anode contact of high-power P-i-N diode. The forward voltage drop (V_F), differential resistance (R_diff) and crossing point current (I_Xing) of diodes were evaluated from the forward I-V curves at different temperatures measured in four point arrangement. The lowest magnitude of contact resistivity and poor thermal stability were obtained for the case of diode with PtSi contact. The additional layers have improved the temperature stability of this contact. It has led to the increase of contact resistance, but the PtSi layer is still possible to use as a source of Pt for further local lifetime control operation.

Citation Download Citation

Dmitro Kolesnikov "New contact stacks with platinum silicide layers", Proc. SPIE 5944, Smart Imagers and Their Application, 594404 (6 December 2006); https://doi.org/10.1117/12.637773

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