12 June 2006Photon multiplication in wide-gap BAM and SAM aluminates
Aleksandr Lushchik, Cheslav Lushchik, Eduard Feldbach, Irina Kudryavtseva, Peeter Liblik, Aarne Maaroos, Vitali Nagirnyi, Fjodor Savikhin, Eugeni Vasil'chenko
Aleksandr Lushchik,1 Cheslav Lushchik,1 Eduard Feldbach,1 Irina Kudryavtseva,1 Peeter Liblik,1 Aarne Maaroos,1 Vitali Nagirnyi,1 Fjodor Savikhin,1 Eugeni Vasil'chenko1
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Processes of various intrinsic and impurity luminescence excitation by 4-32 eV photons or 18 and 300 keV electrons
have been studied in pure and doped BaMgAl10O17 (BAM) and SrMgAl10O17 (SAM) phosphors at 6-300 K. In BAM:Eu
(l0%), the quantum yield of Eu2+ center emission is QY = 1 in the region of exciting photon energies of hνec = 7-12 eV,
the value of QY reaches 2 at 14-21 eV and sharply increases at hνec = 22-32 eV, where secondary electron-hole pairs are
created by hot conduction electrons. The processes connected with the rise of QY for various types of emission in the
region of 14-21 eV have been thoroughly studied for BAM and SAM phosphors. It has been suggested that such exciting
photons cause the ionization of oxygen ions and form hot valence holes, the energy of which is partially used for the
excitation of Eu2+ ions ->(4f7->4f65d1 transitions) due to nonradiative Auger transitions. The intensity of the Eu2+ emission
increases after a single nanosecond electron pulse with a rise time of 50-150 ns. This rise is connected with the energy
transfer from spinel blocks to Eu2+ ions located at cation planes of the β-alumina-type materials.
Aleksandr Lushchik,Cheslav Lushchik,Eduard Feldbach,Irina Kudryavtseva,Peeter Liblik,Aarne Maaroos,Vitali Nagirnyi,Fjodor Savikhin, andEugeni Vasil'chenko
"Photon multiplication in wide-gap BAM and SAM aluminates", Proc. SPIE 5946, Optical Materials and Applications, 594609 (12 June 2006); https://doi.org/10.1117/12.639148
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Aleksandr Lushchik, Cheslav Lushchik, Eduard Feldbach, Irina Kudryavtseva, Peeter Liblik, Aarne Maaroos, Vitali Nagirnyi, Fjodor Savikhin, Eugeni Vasil'chenko, "Photon multiplication in wide-gap BAM and SAM aluminates," Proc. SPIE 5946, Optical Materials and Applications, 594609 (12 June 2006); https://doi.org/10.1117/12.639148