12 June 2006 Photon multiplication in wide-gap BAM and SAM aluminates
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Proceedings Volume 5946, Optical Materials and Applications; 594609 (2006) https://doi.org/10.1117/12.639148
Event: Optical Materials and Applications, 2005, Tartu, Estonia
Abstract
Processes of various intrinsic and impurity luminescence excitation by 4-32 eV photons or 18 and 300 keV electrons have been studied in pure and doped BaMgAl10O17 (BAM) and SrMgAl10O17 (SAM) phosphors at 6-300 K. In BAM:Eu (l0%), the quantum yield of Eu2+ center emission is QY = 1 in the region of exciting photon energies of hνec = 7-12 eV, the value of QY reaches 2 at 14-21 eV and sharply increases at hνec = 22-32 eV, where secondary electron-hole pairs are created by hot conduction electrons. The processes connected with the rise of QY for various types of emission in the region of 14-21 eV have been thoroughly studied for BAM and SAM phosphors. It has been suggested that such exciting photons cause the ionization of oxygen ions and form hot valence holes, the energy of which is partially used for the excitation of Eu2+ ions ->(4f7->4f65d1 transitions) due to nonradiative Auger transitions. The intensity of the Eu2+ emission increases after a single nanosecond electron pulse with a rise time of 50-150 ns. This rise is connected with the energy transfer from spinel blocks to Eu2+ ions located at cation planes of the β-alumina-type materials.
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Aleksandr Lushchik, Cheslav Lushchik, Eduard Feldbach, Irina Kudryavtseva, Peeter Liblik, Aarne Maaroos, Vitali Nagirnyi, Fjodor Savikhin, Eugeni Vasil'chenko, "Photon multiplication in wide-gap BAM and SAM aluminates", Proc. SPIE 5946, Optical Materials and Applications, 594609 (12 June 2006); doi: 10.1117/12.639148; https://doi.org/10.1117/12.639148
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