12 June 2006 SnO2 on sapphire
Author Affiliations +
Proceedings Volume 5946, Optical Materials and Applications; 59460I (2006); doi: 10.1117/12.639167
Event: Optical Materials and Applications, 2005, Tartu, Estonia
Abstract
Atomic layer deposition (ALD) of SnO2 thin films from SnI4 and either H2O2 or O2 on the α-Al203(1 1- 2) substrates is studied. Reactor temperature is varied from 100 to 750 °C. X-ray diffaction, x-ray reflection, x-ray fluorescence, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and UV-visible spectroscopy are used to obtain the growth and structural data. The SnI4-H202 precursor pair brings forth the film growth even at temperatures as low as 100°C with a wholly amorphous outcome up to 150°C. For the pair SnI4-02, the films grown nearby the process initiation temperature of 400°C are also amorphous. When the temperature is raised respectively above 250 and 500°C, both pairs make epitaxial growth happen, generally in three-dimensional mode. Exceptionally, in a limited range of grown thicknesses in the proximity of 50 nm, the growth from SnI4 and O2 at 750°C appears to be driven by the predominantly two-dimensional nucleation, as the films grow extremely flat. The SnI4-02 precursor pair gives at 600- 750°C the highest growth per cycle of about 0.085 nm. The epitaxially grown tetragonal (cassiterite) films are (1 0 1)- oriented. The iodine contamination in them is below 0.1%. All the film-substrate structures are highly transparent in the visible region.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aivar Tarre, Arnold Rosental, Teet Uustare, Aarne Kasikov, "SnO2 on sapphire", Proc. SPIE 5946, Optical Materials and Applications, 59460I (12 June 2006); doi: 10.1117/12.639167; https://doi.org/10.1117/12.639167
PROCEEDINGS
7 PAGES


SHARE
Back to Top