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12 June 2006 SnO2 on sapphire
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Proceedings Volume 5946, Optical Materials and Applications; 59460I (2006)
Event: Optical Materials and Applications, 2005, Tartu, Estonia
Atomic layer deposition (ALD) of SnO2 thin films from SnI4 and either H2O2 or O2 on the α-Al203(1 1- 2) substrates is studied. Reactor temperature is varied from 100 to 750 °C. X-ray diffaction, x-ray reflection, x-ray fluorescence, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and UV-visible spectroscopy are used to obtain the growth and structural data. The SnI4-H202 precursor pair brings forth the film growth even at temperatures as low as 100°C with a wholly amorphous outcome up to 150°C. For the pair SnI4-02, the films grown nearby the process initiation temperature of 400°C are also amorphous. When the temperature is raised respectively above 250 and 500°C, both pairs make epitaxial growth happen, generally in three-dimensional mode. Exceptionally, in a limited range of grown thicknesses in the proximity of 50 nm, the growth from SnI4 and O2 at 750°C appears to be driven by the predominantly two-dimensional nucleation, as the films grow extremely flat. The SnI4-02 precursor pair gives at 600- 750°C the highest growth per cycle of about 0.085 nm. The epitaxially grown tetragonal (cassiterite) films are (1 0 1)- oriented. The iodine contamination in them is below 0.1%. All the film-substrate structures are highly transparent in the visible region.
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Aivar Tarre, Arnold Rosental, Teet Uustare, and Aarne Kasikov "SnO2 on sapphire", Proc. SPIE 5946, Optical Materials and Applications, 59460I (12 June 2006);

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