Ternary semiconductor compound CuInSe2 is one of the most promising absorber material used in solar cells. In this
study, we used CuInSe2 powder materials synthesized in molten salts. Modifying the preparation conditions, we studied
the relationships between the initial and final composition, and determined the preparation conditions for the single-
phase growth of CuInSe2. The as-grown samples were annealed in selenium or sulfur vapor at various temperatures for a
different time period to change the CuInSe2 material properties. Se vapor treatment has been found to influence the bulk
composition. Sulfur vapor treatment has been found to improve the open-circuit voltage of the completed cells by about
100 mV. It could be attributed to an increase of the band gap at the surface of the absorber due to the formation of a
wider band gap CuIn(S,Se)2 material. The incorporation of sulfur into CuInSe2 reduces the carrier recombination in the
interface region, which was indicated as an improvement of the fill factor of the cells.
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