Device characteristics of CuInSe<sub>2</sub>-based solar cells

Jüri Krustok; Mati Danilson; Andri Jagomägi; Maarja Grossberg; Jaan Raudoja

doi:10.1117/12.639060

13 June 2006 Device characteristics of CuInSe₂-based solar cells

Jüri Krustok, Mati Danilson, Andri Jagomägi, Maarja Grossberg, Jaan Raudoja

Proceedings Volume 5946, Optical Materials and Applications; 59460W (2006) https://doi.org/10.1117/12.639060
Event: Optical Materials and Applications, 2005, Tartu, Estonia

Abstract

Ternary chalcopyrite semiconductor CuInSe₂ (CIS) is a promising material for the fabrication of high-efficiency low-cost solar cells. However, various recombination losses decrease the efficiency of the cells and deteriorate their other characteristics. To identify the recombination channels and to obtain information about the related defects, we conducted current-voltage measurements at various temperatures, followed by admittance spectroscopy measurements and bias dependent quantum efficiency measurements. Two types of solar cells were studied: the ones based on the CIS monograin layers, and the others based on CuInGaSe₂ thin films. The temperature dependence of the open-circuit voltage of the monograin cells demonstrated that the dominant recombination channel involves CIS-CdS interface states. According to the admittance spectroscopy data, the states lie at 150-166 meV below the conduction band of CIS. In some samples, a defect state at about 45 meV was observed. The quantum efficiency measurements revealed the influence of the sulphur post-treatment on the band gap of the absorber material. The derivative curves brought out the influence in the best possible way.

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Jüri Krustok, Mati Danilson, Andri Jagomägi, Maarja Grossberg, and Jaan Raudoja "Device characteristics of CuInSe₂-based solar cells", Proc. SPIE 5946, Optical Materials and Applications, 59460W (13 June 2006); https://doi.org/10.1117/12.639060

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