13 June 2006 Photoreflectance and differential surface photovoltage studies of δ-doped GaAs/AlAs multiple quantum wells
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Proceedings Volume 5946, Optical Materials and Applications; 59460Z (2006) https://doi.org/10.1117/12.639337
Event: Optical Materials and Applications, 2005, Tartu, Estonia
Abstract
We measured the photoreflectance (PR) and wavelength-modulated differential surface photovoltage (DSPV) spectra of δ-doped GaAs/AlAs multiple quantum wells (MQW) with different well widths and doping levels. We demonstrated that PR and DSPV are powerful contactless tools for the characterization of MQW structures. We observed Franz-Keldysh oscillations in the PR spectra, which enabled us to determine the built-in electric fields in the GaAs/AlAs MQW structures. As it turned out, in the GaAs buffedcap layers the field strength is in the range of 18-20 kV/cm. It was found that a buried interface rather than the structure surface very probably governs the SPV effect. Sharp features associated with excitonic optical transitions were revealed in both, PR and DSPV spectra. From the line shape analysis of the modulation spectra, we estimated optical transition energies and broadening parameters. The energy levels and interband transition energies calculated by the transfer matrix method are in good agreement with the experimental values. The influence of the doping on the broadening of exciton resonances was observed and investigated.
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Bronislovas Čechavičius, Julius Kavaliauskas, Genė Krivaitė, Dalius Seliuta, Gintaras Valušis, Matthew P. Halsall, Matthew J. Steer, Paul Harrison, "Photoreflectance and differential surface photovoltage studies of δ-doped GaAs/AlAs multiple quantum wells", Proc. SPIE 5946, Optical Materials and Applications, 59460Z (13 June 2006); doi: 10.1117/12.639337; https://doi.org/10.1117/12.639337
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