13 June 2006 Si/Ge multilayer structures for optoelectronic applications
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Proceedings Volume 5946, Optical Materials and Applications; 594610 (2006) https://doi.org/10.1117/12.639339
Event: Optical Materials and Applications, 2005, Tartu, Estonia
Quantum-dot Si/Ge superlattice structures with the Ge amount slightly above the critical for island formation are prepared by molecular beam epitaxy. The structures grown under optimized conditions are defect-free. Their structural and optical properties are described. A significant increase in the RT luminescence efficiency is obtained by adjusting such parameters as the growth temperature, growth rate of Ge, the number of the Ge quantum-dot sheets, their thickness, the level of Sb doping at specific planes, and the thickness of Si spacers. An intensive RT electroluminescence from the structures in the fiber optic communications 1.6-μm range is demonstrated. The approach opens new routes to the fabrication of Si-based RT light emitters.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George Cirlin, George Cirlin, Alexander Tonkikh, Alexander Tonkikh, Vadim Talalaev, Vadim Talalaev, Nikolai Zakharov, Nikolai Zakharov, Peter Werner, Peter Werner, } "Si/Ge multilayer structures for optoelectronic applications", Proc. SPIE 5946, Optical Materials and Applications, 594610 (13 June 2006); doi: 10.1117/12.639339; https://doi.org/10.1117/12.639339

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