13 June 2006 GaAs nanowhiskers grown by molecular beam epitaxy on GaAs(111)B surface activated by Au: theory and experiment
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Proceedings Volume 5946, Optical Materials and Applications; 594611 (2006) https://doi.org/10.1117/12.639405
Event: Optical Materials and Applications, 2005, Tartu, Estonia
GaAs nanowhiskers are grown by molecular beam epitaxy (MBE) on the GaAs(111)B surface activated by Au at different conditions (Au layer thickness, GaAs flux, substrate temperature, effective thickness of deposited GaAs) and characterized by scanning electron microscopy technique. The dependence of the nanowhisker height on the size of Au- GaAs alloy drops is investigated. A kinetic model of nanowhiskers formation in the vapor-liquid-solid growth mechanism is proposed. In particular, the nanowhiskers growth rate is found as a function of the drop size, system energetics, and MBE growth conditions. The predictions of a theoretical model are compared to the results of experimental observations. It is demonstrated that the MBE method enables one to fabricate nanowhiskers ensembles with tunable structural properties (height, lateral size distribution, surface density) by changing the Au layer thickness, the amount of deposited GaAs, and MBE growth conditions.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir Dubrovskii, Vladimir Dubrovskii, Nikolai Sibirev, Nikolai Sibirev, George Cirlin, George Cirlin, Yuri Musikhin, Yuri Musikhin, Ilya Soshnikov, Ilya Soshnikov, Yuri Samsonenko, Yuri Samsonenko, Alexander Tonkikh, Alexander Tonkikh, Victor Ustinov, Victor Ustinov, } "GaAs nanowhiskers grown by molecular beam epitaxy on GaAs(111)B surface activated by Au: theory and experiment", Proc. SPIE 5946, Optical Materials and Applications, 594611 (13 June 2006); doi: 10.1117/12.639405; https://doi.org/10.1117/12.639405

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