13 June 2006 Hot carrier photocapacitive effect
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Proceedings Volume 5946, Optical Materials and Applications; 594619 (2006) https://doi.org/10.1117/12.639324
Event: Optical Materials and Applications, 2005, Tartu, Estonia
Semiconductor p-n and metal-insulator-semiconductor structures containing a capacitive element were investigated under pulsed ir laser irradiation. It is shown that the carrier heating in the structures is responsible for the rise of the photosignal. A direct correlation between the photosignal and the capacitance of the structures is confirmed. Possible applications of the effect are discussed.
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Steponas Ašmontas, Jonas Gradauskas, Algirdas Sužiedėlis, Edmundas Širmulis, Antanas Urbelis, "Hot carrier photocapacitive effect", Proc. SPIE 5946, Optical Materials and Applications, 594619 (13 June 2006); doi: 10.1117/12.639324; https://doi.org/10.1117/12.639324

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