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20 September 2005 Modeling of optoelectronic properties of semiconductors by kernel machines
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Abstract
New algorithms have been introduced for extraction of defect centers parameters in semiconductors from experimental data obtained by photoinduced transient spectroscopy. The photocurrent decays are measured as function of time and temperature. The defect centers act as traps of charge carriers. Hence, each trap creates a specific fold on a correlation surface and on the Laplace surface and the ridges of folds correspond to the Arrhenius law. The quality of the data analysis depend mainly on the applied approximation methods. It is shown that the modern methods based on margin maximization and on regularization give excellent results. The analyzed are the following approximation methods: support vector machine, sparse least square support vector machine. The important advantages of these models are as follows: good accuracy of approximation, analytic representation of considered surfaces, low complexity and finally excellent generalization. Hence, they enable to obtain more exact values of investigated defects and better discrimination of observed defects
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stanislaw Jankowski "Modeling of optoelectronic properties of semiconductors by kernel machines", Proc. SPIE 5948, Photonics Applications in Industry and Research IV, 59480Z (20 September 2005); https://doi.org/10.1117/12.623030
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