8 October 2005 A comparative analysis of Si wafer surface structure based on AFM and scattered light measurement techniques
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Abstract
A scanning helium atom microscope, is a very promising tool in surface science. In this technique a focused beam of low energy, neutral helium atoms is used as an imaging probe. The method is suitable to be applied to surface investigation in science and industry. The He-beam is created by supersonic expansion from a high pressure reservoir through a nozzle. It is focused onto the sample by a mirror created from an electrostatically deformed single silicon wafer. The shape of the mirror is obtained by an electrode system controlled by a computer. The focusing mirror consists of a chemically-prepared silicon wafer placed between two aluminium discs and suspended above an electrode structure. The surface quality of the mirror is the most crucial because it limits resolution of the helium microscope. Therefore it is planned to make various improvements to the mirror at both the macroscopic and atomic levels. The centre of gravity of the paper is in measurements of the surface quality of the wafer using scattered light based technique and AFM, so that the technological process of the wafers could be modified to obtain improved surface. The roughness was studied for the (111) oriented mechanically-chemically polished surfaces of silicon wafers with different miscut. The wafers with miscut of 0°, ± 0.25o and ± 0.5o toward (11bar2) direction were used for experiments. The miscut was determined with the accuracy of ±1'.
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D. Litwin, D. Litwin, B. Surma, B. Surma, B. Piatkowski, B. Piatkowski, A. Miros, A. Miros, J. Galas, J. Galas, } "A comparative analysis of Si wafer surface structure based on AFM and scattered light measurement techniques", Proc. SPIE 5948, Photonics Applications in Industry and Research IV, 59481L (8 October 2005); doi: 10.1117/12.622464; https://doi.org/10.1117/12.622464
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