Analysis of important metrological problems of Raman investigation of solid state thin films is given in this paper. Raman studies of such films can be carried out as ex-situ measurements conducted for a sample outside the reaction vessel after manufacturing process or as in-situ monitoring of film deposition. First approach gives more possibilities of structure investigation while the second one can be used for optimisation of the manufacturing process parameters. One of the most important problems in the investigation of thin films is low level of the useful Raman signal, which is result of a small path length in the sample and, in some cases, optical properties of investigated materials. Moreover, for some applications, especially in-situ monitoring, it is difficult to excite the proper part of investigated structure. Consequently, sophisticated optical setups must be applied to ensure sufficient sensitivity of the measurement system. Raman systems able to use in investigation of thin solid films and monitoring of their deposition processes are presented. Results of Raman investigation of selected structures, starting from monocrystals through polycrystalline thin films to the amorphous ones are presented.