5 October 2005 Anomalous influence of electrons diffusion on absorption optical bistability realization
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Abstract
An influence of electrons diffusion on the intensities of switching for absorption optical bistability based on high-intensity femtosecond laser pulse interaction with semiconductor is studied. The dependence of absorption coefficient on free electrons concentration and on induced electric field strength or its potential is considered. With the help of computer simulation an anomalous influence of electrons diffusion on intensities of switching under taking into account of free electrons mobility.
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Vyacheslav A. Trofimov, Vyacheslav A. Trofimov, Maria M. Loginova, Maria M. Loginova, } "Anomalous influence of electrons diffusion on absorption optical bistability realization", Proc. SPIE 5949, Nonlinear Optics Applications, 59490H (5 October 2005); doi: 10.1117/12.622445; https://doi.org/10.1117/12.622445
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