Paper
29 September 2005 Recent developments in InP-based optoelectronic devices
H. Venghaus, H.-G. Bach, S. Bauer, A. Beling, H. Heidrich, D. Hoffman, B. Hüttl, R. Kaiser, J. Kreissl, G. G. Mekonnen, M. Möhrle, W. Rehbein, B. Sartorius, K.-O. Velthaus
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Abstract
Recent development trends in InP-based optoelectronic devices are illustrated by means of selected examples. These include lasers for uncooled operation and direct modulation at 10 Gbit/s, complex-coupled lasers, which exhibit particularly low sensitivity to back reflections as well as monolithic mode-locked semiconductor lasers as ps-pulse sources for OTDM applications. Furthermore, a Mach-Zehnder interferometer modulator for high bit rate applications (40 Gbit/s and beyond) is described, and finally, photoreceivers and ultra high-speed waveguide-integrated photodiodes with > 100 GHz bandwidth are presented, which are key component for high bit rate systems, advanced modulation format transmission links, and for high speed measurement equipment as well.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Venghaus, H.-G. Bach, S. Bauer, A. Beling, H. Heidrich, D. Hoffman, B. Hüttl, R. Kaiser, J. Kreissl, G. G. Mekonnen, M. Möhrle, W. Rehbein, B. Sartorius, and K.-O. Velthaus "Recent developments in InP-based optoelectronic devices", Proc. SPIE 5956, Integrated Optics: Theory and Applications, 59560I (29 September 2005); https://doi.org/10.1117/12.626559
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KEYWORDS
Waveguides

Modulation

Photodetectors

Photodiodes

Eye

Laser applications

Mode locking

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