30 September 2005 Fabrication and characterization of chalcogenide films
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Abstract
Amorphous chalcogenide films can play a motivating role in the development of integrated planar optical circuits and their components. The aim of the present investigation was to optimize deposition conditions of pure and Tm3+ or Er3+ doped sulphide films by PLD and rf magnetron sputtering system. The study of their compositional, morphological and structural characteristics was realized by MEB-EDS, atomic force, RBS, X-ray diffraction and Raman spectroscopy analyses. Some optical properties (transmittance, index of refraction, optical band gap, etc) of prepared chalcogenide films and the propagation modes measured at 633 nm, 1304 nm and 1540 nm by means of the m-lines prism-coupling configuration were investigated. The whole results point out hopeful perspectives strengthened by the clear observation of the photo-luminescence of erbium and thulium within doped sulphide films.
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V. Nazabal, C. Bousquet, J.-L. Adam, Petr Němec, Jaroslav Jedelský, Miloslav Frumar, C. Duverger, A.M. Jurdyc, B. Jacquier, P. Vinatier, T. Cardinal, "Fabrication and characterization of chalcogenide films", Proc. SPIE 5956, Integrated Optics: Theory and Applications, 59560Z (30 September 2005); doi: 10.1117/12.622877; https://doi.org/10.1117/12.622877
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