29 September 2005 InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging
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Abstract
The first fully operational mid-IR (3-5 μm) 256x256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detector chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement.
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Robert Rehm, Martin Walther, Johannes Schmitz, Joachim Fleißner, Frank Fuchs, Johann Ziegler, Wolfgang Cabanski, "InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging", Proc. SPIE 5957, Infrared Photoelectronics, 595707 (29 September 2005); doi: 10.1117/12.627054; https://doi.org/10.1117/12.627054
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