29 September 2005 V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates
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Abstract
CdTe and HgCdTe layers were grown by MBE on GaAs(310) and Si(310) substrates. The dependences of microrelief height and macroscopic defects densities on the growth conditions of CdTe layer are plotted. CdTe buffer layers with the average height of surface relief of 2 nm are obtained. HgCdTe layers on GaAs(310) substrates with V-shaped defects density of 200-300 cm-2 were grown. When Si(310) substrates are used, the boundaries between antiphase domains are an additional reason for formation of V-shaped defects. It is shown, that the optimization of surface preparation processes and the growth conditions allows to grow one-domain films of CdTe buffer layers on Si(310) substrates and to lower the density of V-shaped defects.
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Maxim Yakushev, Maxim Yakushev, Alexander Babenko, Alexander Babenko, Danil Ikusov, Danil Ikusov, Vladimir Kartashov, Vladimir Kartashov, Nicolai Mikhailov, Nicolai Mikhailov, Irina Sabinina, Irina Sabinina, Yuri Sidorov, Yuri Sidorov, Vladimir Vasiliev, Vladimir Vasiliev, } "V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates", Proc. SPIE 5957, Infrared Photoelectronics, 59570G (29 September 2005); doi: 10.1117/12.622424; https://doi.org/10.1117/12.622424
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