384x288 MCT LWIR FPA

K. O. Boltar; I. D. Burlakov; S. V. Golovin; N. I. Yakovleva; L. D. Saginov; V. M. Akimov

doi:10.1117/12.625145

29 September 2005 384x288 MCT LWIR FPA

K. O. Boltar, I. D. Burlakov, S. V. Golovin, N. I. Yakovleva, L. D. Saginov, V. M. Akimov

Proceedings Volume 5957, Infrared Photoelectronics; 59570H (2005) https://doi.org/10.1117/12.625145
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

LWIR staring 384x288 focal plane array (FPA) has been developed and investigated. FPAs are manufactured on the basis of mercury cadmium telluride epitaxial layers grown both by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). 384x288 FPA consists of a MCT photodiodes array formed in the p-type layer by ion implantation and silicon readout integrated circuit (ROIC). The photodiodes array pitch in each direction is 28 μm. ROIC performs the photocurrents integration during row period, signals multiplexing in two output channels from the focal plane. MCT photovoltaic array and ROIC are bonded by indium bumps. This photosensitive assembly is packaged in vacuum metal encapsulation and cooled down to temperature 80 K. Average detectivity was of 4.4^.10¹⁰ W^-1^.cm^.Hz^1/2 for FPA cutoff wavelength of 10.7 μm. Test IR system on the basis of FPA was developed to obtain thermal images in real time mode at frame frequency 50 Hz. Test IR system performs two-point correction and defective elements replacement.

Citation Download Citation

K. O. Boltar, I. D. Burlakov, S. V. Golovin, N. I. Yakovleva, L. D. Saginov, and V. M. Akimov "384x288 MCT LWIR FPA", Proc. SPIE 5957, Infrared Photoelectronics, 59570H (29 September 2005); https://doi.org/10.1117/12.625145

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KEYWORDS

Staring arrays

Photodiodes

Readout integrated circuits

Liquid phase epitaxy

Long wavelength infrared

Thermography

Silicon

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