Translator Disclaimer
29 September 2005 384x288 MCT LWIR FPA
Author Affiliations +
LWIR staring 384x288 focal plane array (FPA) has been developed and investigated. FPAs are manufactured on the basis of mercury cadmium telluride epitaxial layers grown both by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). 384x288 FPA consists of a MCT photodiodes array formed in the p-type layer by ion implantation and silicon readout integrated circuit (ROIC). The photodiodes array pitch in each direction is 28 μm. ROIC performs the photocurrents integration during row period, signals multiplexing in two output channels from the focal plane. MCT photovoltaic array and ROIC are bonded by indium bumps. This photosensitive assembly is packaged in vacuum metal encapsulation and cooled down to temperature 80 K. Average detectivity was of 4.4.1010 for FPA cutoff wavelength of 10.7 μm. Test IR system on the basis of FPA was developed to obtain thermal images in real time mode at frame frequency 50 Hz. Test IR system performs two-point correction and defective elements replacement.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. O. Boltar, I. D. Burlakov, S. V. Golovin, N. I. Yakovleva, L. D. Saginov, and V. M. Akimov "384x288 MCT LWIR FPA", Proc. SPIE 5957, Infrared Photoelectronics, 59570H (29 September 2005);


256 x 256 LWIR FPAs using MBE grown HgCdTe on...
Proceedings of SPIE (August 13 1997)
LWIR 2x256 focal plane array for time delay and integration
Proceedings of SPIE (September 30 2003)
Fifty years of HgCdTe at Texas Instruments and beyond
Proceedings of SPIE (May 07 2009)
384 X 288 HgCdTe staring focal plane array
Proceedings of SPIE (November 28 2000)
128x128 and 384x288 HgCdTe staring focal plane arrays
Proceedings of SPIE (June 10 1999)
InSb focal plane arrays with frame accumulation
Proceedings of SPIE (September 29 2005)

Back to Top