29 September 2005 Quantum structures for multiband photon detection
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Proceedings Volume 5957, Infrared Photoelectronics; 59570W (2005); doi: 10.1117/12.620635
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland
Abstract
The work describes multiband photon detectors based on semiconductor micro- and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and internal photoemission play the dominant role in homo or heterojunction detectors. Quantum Dots-in-a-Well (DWELL) detectors can tailor the response wavelength by varying the size of the well. A tunneling Quantum Dot Infrared Photodetector (T-QDIP) could operate at room temperature by blocking the dark current except in the case of resonance. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunneling, while the dark current is blocked by AlGaAs/InGaAs tunneling barriers placed in the structure. A two-color infrared detector with photoresponse peaks at ~6 and ~17 μm at room temperature will be discussed. A Homojunction or HEterojunction Interfacial Workfunction Internal Photoemission (HIWIP or HEIWIP) infrared detector, formed by a doped emitter layer, and an intrinsic layer acting as the barrier followed by another highly doped contact layer, can detect near infrared (NIR) photons due to interband transitions and mid/far infrared (MIR/FIR) radiation due to intraband transitions. The threshold wavelength of the interband response depends on the band gap of the barrier material, and the MIR/FIR response due to intraband transitions can be tailored by adjusting the band offset between the emitter and the barrier. GaAs/AlGaAs will provide NIR and MIR/FIR dual band response, and with GaN/AlGaN structures the detection capability can be extended into the ultraviolet region. These detectors are useful in numerous applications such as environmental monitoring, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing.
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A. G. U. Perera, "Quantum structures for multiband photon detection", Proc. SPIE 5957, Infrared Photoelectronics, 59570W (29 September 2005); doi: 10.1117/12.620635; https://doi.org/10.1117/12.620635
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KEYWORDS
Sensors

Gallium arsenide

Infrared detectors

Near infrared

Quantum dots

Quantum wells

Silicon

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