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29 September 2005 Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe
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Abstract
The electro-physical and photo-electrical properties of the HgCdTe/SiO2/Si3N4 and HgCdTe/anodic-oxide film MIS structures is experimentally studied. The heteroepitaxial graded-band films Hg0.78Cd0.22Te were produced on the GaAs substrates by molecular-beam epitaxy. It was established of features of electrical properties were related with conduction type of the semiconductor and to the presence of near-surface graded-band layers. The test measurements of the electro-physical and photoelectric performances of MIS-structures in base of graded-band HgCdTe are held and the following parameters are found: resistances of volume, voltage of flat bands, densities of mobile and fixed charges, spectrums of surface states. It is shown that low-temperature double insulator SiO2/Si3N4 is perspective for passivation of surface of focal plane arrays in base of HgCdTe-photodiodes.
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A. Voitsekhovskii, S. Nesmelov, A. Kokhanenko, Yu. Sidorov, V. Varavin, S. Dvoretsky, N. Mikhailov, V. Vasiliev, Yu. Mashukov, and T. Zakharyash "Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe", Proc. SPIE 5957, Infrared Photoelectronics, 595717 (29 September 2005); https://doi.org/10.1117/12.622117
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