29 September 2005 Researching photoelectric parameters of MCT MBE graded band-gap nanolayers with non-homogeneous composition and level of doping
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Abstract
Results of research electrophysical and photoelectric properties of HgCdTe photoconductive structures grown by method molecular beam epitaxy under influence of background radiation are submitted. Strong dependence of photoconductivity and carriers lifetime for a level of background radiation (for change aperture angle of diaphragm), which come to an agreement with results of calculation for the Auger mechanism of recombination are represented.
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Alexander V. Voitsekhovskii, Alexander V. Voitsekhovskii, Andrey P. Kokhanenko, Andrey P. Kokhanenko, Michael F. Filatov, Michael F. Filatov, Nelly V. Fedorova, Nelly V. Fedorova, } "Researching photoelectric parameters of MCT MBE graded band-gap nanolayers with non-homogeneous composition and level of doping", Proc. SPIE 5957, Infrared Photoelectronics, 595719 (29 September 2005); doi: 10.1117/12.622173; https://doi.org/10.1117/12.622173
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