Changing of the near surface layer properties of the Hg1-xCdxTe crystals by ion beam milling

L. Dumanski; I. Virt; M. Kuzma

doi:10.1117/12.622539

29 September 2005 Changing of the near surface layer properties of the Hg_1-xCd_xTe crystals by ion beam milling

L. Dumanski, I. Virt, M. Kuzma

Proceedings Volume 5957, Infrared Photoelectronics; 59571B (2005) https://doi.org/10.1117/12.622539
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

In this paper the influence of low-energy Ar ion beam milling (IBM) on the properties of n- type Hg_1-xCd_xTe crystals has been studied. The as growth samples as well as these with thin Au layers deposited on the surface before irradiation has been investigated. The milling was carried out at room temperature and ions energy was 2 keV. In the initial samples the electronic properties of the near surface layer of 50 mm thick were changed. From Petritz model of the Hall results of two layer system the mobility and concentration of charge carriers in the modified layers were determined. In the samples with metal layer the doping caused by IBM is observed. In the case of Au the compensation phenomena is addressed. The model of defects created and theirs diffusion is discussed.

Citation Download Citation

L. Dumanski, I. Virt, and M. Kuzma "Changing of the near surface layer properties of the Hg_1-xCd_xTe crystals by ion beam milling", Proc. SPIE 5957, Infrared Photoelectronics, 59571B (29 September 2005); https://doi.org/10.1117/12.622539

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