29 September 2005 Photoelectric, structural and mechanical properties of iso-valency replaced n-Hg0.79Cd0.21Te single crystals
Author Affiliations +
Abstract
Effect of iso-valency doping with S, Se or Zn dopants on Hg1-xCdxTe mechanical, structural and photoelectric properties is considered. It was revealed that iso-valency doping reduced the etch pit density and increased the microhardness in Hg1-xCdxTe single crystals. Such doping also improved the photoelectric properties, especially increased the excess carrier lifetime. Taking into account the value of equilibrium concentration of S, Se and Zn iso-valency dopants in Hg1-xCdxTe single crystals it was concluded that the most suitable iso-valency dopant is Se.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kurban Kurbanov, Kurban Kurbanov, Viktor Bogoboyashchyy, Viktor Bogoboyashchyy, Ihor Izhnin, Ihor Izhnin, } "Photoelectric, structural and mechanical properties of iso-valency replaced n-Hg0.79Cd0.21Te single crystals", Proc. SPIE 5957, Infrared Photoelectronics, 59571E (29 September 2005); doi: 10.1117/12.622873; https://doi.org/10.1117/12.622873
PROCEEDINGS
4 PAGES


SHARE
RELATED CONTENT


Back to Top