Third generation sensors are under development to enhance capabilities for target detection and identification, threat warning, and 3-D imaging. Distinct programs for both cooled HgCdTe and
uncooled microbolometer devices are part of this thrust. This paper will describe the technology for HgCdTe two-color, high-definition imaging sensors and threat warning devices, avalanche photodiode arrays for 3-D imaging, and the supporting technology being developed to enhance the readouts that support these devices. Uncooled detector initiatives will also be described to reduce pixel size in conjunction with the production of 480×640 arrays. Finally, efforts are also beginning to move both photon and thermal detectors closer to radiative-limited performance while simultaneously reducing the cooling requirements for photon detectors.