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11 October 2005 Comparison of technology and laser properties of epitaxially grown 1.06 μm and eye safe microchip laser
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Abstract
Most of the work on passively Q-switched microchip lasers emitting at 1064 nm has been done with neodymium-doped YAG crystals as gain material and Cr4+:YAG as saturable absorber. The bulk Cr4+:GGG Czochralski grown passive Q-switches were also investigated. We have used a technique of liquid phase epitaxy (LPE) to grow Cr4+:YAG, Cr4+:GGG and Co2+:YAG thin films of saturable absorber. X-ray diffraction analysis, optical transmission spectra measurements and passive Q-switching experiments were performed to characterize the obtained layers. Absorption saturation measurements of Cr4+:YAG, Cr4+:GGG and Co2+:YAG layers were carried out at 1.06 μm and 1.54 μm, respectively.
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Krzysztof Kopczynski, Jerzy Sarnecki, Jarosław Mlynczak, Zygmunt Mierczyk, and Jerzy Skwarcz "Comparison of technology and laser properties of epitaxially grown 1.06 μm and eye safe microchip laser", Proc. SPIE 5958, Lasers and Applications, 59582E (11 October 2005); https://doi.org/10.1117/12.623306
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