19 October 2005 Co2MnSi growth on semiconductor substrate by double-beams pulsed laser deposition
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Abstract
This present work concerns the growth and the characterization of Co2MnSi thin films deposited onto GaAs substrates. Two PLD configurations have been explored, the conventional 1-Beam-PLD and the 2-Crossed-Beams-PLD one. We demonstrated that, with 1B-PLD conditions, we got Co2MnSi polycrystalline structure with unwanted droplets. The 2CB-PLD allowed us to get droplet-free, single crystalline thin films at substrate temperature as low as 353 K.
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Michel L. Autric, Michel L. Autric, Eric Valerio, Eric Valerio, Cristiana E. Grigorescu, Cristiana E. Grigorescu, "Co2MnSi growth on semiconductor substrate by double-beams pulsed laser deposition", Proc. SPIE 5958, Lasers and Applications, 59582M (19 October 2005); doi: 10.1117/12.625689; https://doi.org/10.1117/12.625689
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