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14 October 2005 Mask tilt effects counteracted by wafer tilts in a Schwarzschild objective based EUV lithography setup
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Abstract
The results of a numerical simulation of a conventional and a modified Schwarzschild objective are illustrated in relation with their use as imaging systems in an extreme ultraviolet lithography setup. It is demonstrated that the degradation of the resolution on the wafer due to the unavoidable tilt of the mask to the axis can fairly be vanished by a counter tilt of the wafer. In particular, it has been analysed the Schwarzschild objective setup under implementation at the ENEA Frascati Center within the context of the Italian FIRB project for EUV lithography.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Bollanti, P. Di Lazzaro, F. Flora, L. Mezi, D. Murra, and A. Torre "Mask tilt effects counteracted by wafer tilts in a Schwarzschild objective based EUV lithography setup", Proc. SPIE 5962, Optical Design and Engineering II, 59622Y (14 October 2005); https://doi.org/10.1117/12.624845
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