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5 October 2005 Comparison of optical resistance of ion assisted deposition and standard electron beam deposition methods for high reflectance dielectric coatings
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Abstract
The ion assisted thin film deposition (IAD) method has been used extensively for more than two decades, but questions about possibility of improving of the laser-induced damage threshold (LIDT) by this method compared with the conventional electron-beam evaporation (non-IAD) method are still not fully answered. A more complete understanding of different factors that can influence laser-induced damage threshold is necessary for continued development of multilayer dielectric coatings optimized for high-power laser applications. To clarify these factors we performed comparison of LIDT for IAD and non-IAD coatings in nanosecond and femtosecond pulse ranges. High reflectance mirrors at 800 nm and 532 nm were tested. Mirror coatings were made of ZrO2 and SiO2. Automated LIDT measurements were performed according to the requirements of current ISO 11254-2 standard. Two lasers were used for the measurements: Nd:YAG (λ = 532 nm, τ = 5 ns) and Ti:Sapphire (λ = 800 nm, τ = 130 fs). Measurements at 800 nm and 532 nm were performed at 1-kHz and 10 Hz pulse repetition rate respectively (S-on-1 test). The damage morphology of coatings was characterized by Nomarski microscopy and relation of LIDT with coating parameters was analyzed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Melninkaitis, M. Maciulevicius, T. Rakickas, D. Miksys, R. Grigonis, V. Sirutkaitis, A. Skrebutenas, R. Buzelis, R. Drazdys, and G. Abromavicius "Comparison of optical resistance of ion assisted deposition and standard electron beam deposition methods for high reflectance dielectric coatings", Proc. SPIE 5963, Advances in Optical Thin Films II, 59631H (5 October 2005); https://doi.org/10.1117/12.619987
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