Translator Disclaimer
Paper
5 October 2005 New advances in improving low-temperature stability of infrared thin-film interference filters
Author Affiliations +
Abstract
The degeneration of performance of an optical thin-film interference filter associated with the change of temperature is not acceptable. In this letter, we report a new progress in improving low-temperature performance of infrared narrow-band filters by using Pb1-xGexTe initial bulk alloy with appropriate Ge concentration x. It can be found that there exists a critical temperature for the investigated narrow-band filter, at which the temperature coefficient of filter is exactly zero. Therefore, by means of controlling the composition in (Pb1-xGex)1-yTey layers, the temperature coefficient of filter can be tunable at the designated low-temperature. In our present investigation, when temperature varies from 300 to 85 K, a shift of peak wavelength of 0.05935 nm.K-1 has been achieved.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Li, S. Y. Zhang, D. Q. Liu, and F. S. Zhang "New advances in improving low-temperature stability of infrared thin-film interference filters", Proc. SPIE 5963, Advances in Optical Thin Films II, 596328 (5 October 2005); https://doi.org/10.1117/12.625375
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top