New advances in improving low-temperature stability of infrared thin-film interference filters

B. Li; S. Y. Zhang; D. Q. Liu; F. S. Zhang

doi:10.1117/12.625375

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5 October 2005 New advances in improving low-temperature stability of infrared thin-film interference filters

B. Li, S. Y. Zhang, D. Q. Liu, F. S. Zhang

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Proceedings Volume 5963, Advances in Optical Thin Films II; 596328 (2005) https://doi.org/10.1117/12.625375
Event: Optical Systems Design 2005, 2005, Jena, Germany

Abstract

The degeneration of performance of an optical thin-film interference filter associated with the change of temperature is not acceptable. In this letter, we report a new progress in improving low-temperature performance of infrared narrow-band filters by using Pb_1-xGe_xTe initial bulk alloy with appropriate Ge concentration x. It can be found that there exists a critical temperature for the investigated narrow-band filter, at which the temperature coefficient of filter is exactly zero. Therefore, by means of controlling the composition in (Pb_1-xGe_x)₁_-yTe_y layers, the temperature coefficient of filter can be tunable at the designated low-temperature. In our present investigation, when temperature varies from 300 to 85 K, a shift of peak wavelength of 0.05935 nm.K^-1 has been achieved.

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B. Li, S. Y. Zhang, D. Q. Liu, and F. S. Zhang "New advances in improving low-temperature stability of infrared thin-film interference filters", Proc. SPIE 5963, Advances in Optical Thin Films II, 596328 (5 October 2005); https://doi.org/10.1117/12.625375

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