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13 October 2005 Comparative analysis of low-doped bulk, LPE and MBE grown n-Hg1-xCdxTe material and photoconductors based on it
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Abstract
Narrow-gap low-doped n-Hg1-xCdxTe (x = 0.18-0.35) material with electron concentration at liquid nitrogen temperature (77 K) n77≈(1-10)×1014 cm-3 is preferably used by all manufacturers of infrared (IR) radiation detectors as absorbing layer (n-absorber) of high performance Mid-Wave (MWIR), Long-Wave (LWIR) and Very Long-Wave (VLWIR) photoconductors (PC) covering spectral range from 3 to 25 μm. Low-doped n-Hg1-xCdxTe (x = 0.21-0.65) material with n77≈(1-5)×1015 cm-3 is perspective for development and production of novel small- pitched photovoltaic (PV) Short-Wave (SWIR), MWIR, LWIR and multi- color infrared focal plane arrays (FPA) covering spectral range from 1.3 to 12 μm. Novel FPA is based on photodiodes (PD) with p-n junction opposite to usually used n+-p junction. PD with optimal p-n junction could have lower dark current value than same size n+-p junction. It is very desirable for adequate multiplexing of PD arrays by Silicon Read-out Integrated Circuits (ROIC). Low-doped n-Hg1-xCdxTe could be grown by different techniques: bulk crystallization; liquid phase epitaxy (LPE); molecular beam epitaxy (MBE) having seriously different referring (melting/crystallization/annealing) temperatures. Objective of the present work was to examine and compare some crystalline, chemical and physical parameters and impact of PC device performance on their variation.
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Mikhail S. Nikitin "Comparative analysis of low-doped bulk, LPE and MBE grown n-Hg1-xCdxTe material and photoconductors based on it", Proc. SPIE 5964, Detectors and Associated Signal Processing II, 596405 (13 October 2005); doi: 10.1117/12.624498; https://doi.org/10.1117/12.624498
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