14 October 2005 Low energy inductively coupled plasma etching of HgCdTe
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Abstract
The high-density inductively coupled plasma etching technique was applied to HgCdTe, while using the RF-powered wafer electrode to provide low plasma energy. By using a CH4/H2/N2/Ar chemistry the HgCdTe etch profiles were studied as a function of mask selectivity, chamber pressure, gas ratio and ICP power. The etch rate was found to decrease as etch depth increasing. The LBIC and I-V measurements were employed to investigate the electrical damage of HgCdTe material caused by plasma bombardment.
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Xiaoning Hu, Zhenhua Ye, Ruijun Ding, Li He, Glenn Tan, Ligang Deng, "Low energy inductively coupled plasma etching of HgCdTe", Proc. SPIE 5964, Detectors and Associated Signal Processing II, 596408 (14 October 2005); doi: 10.1117/12.625143; https://doi.org/10.1117/12.625143
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