14 October 2005 Far infrared and submillimeter range photosensitive devices based on Pb1-xSnxTe films: results and perspectives
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Abstract
Results of fabrication and parameters of infrared detectors based on In-doped lead-tin-telluride (LTT) films are presented. The films were grown using molecular beam epitaxy on BaF2 substrates. The focal plane arrays operated at 7 to 15 K have shown better parameters than those known for impurity photoconductors. The typical average values of NEP were below 1,0×10-18 W /Hz1/2 at T=7K with cut-off λc = 20-25 μm. The operability of 2×128 focal plane arrays was over 90%. The model explaining the electrical and photoelectrical properties of the LTT films based on theories of space charge limited currents (SCLC) and ferroelectric phase transition (FEPT) has been developed. The calculations according to this model are in a good agreement with the experimental data. The laser-excited (λ=336.8 μ) photocurrent was observed, and prospects of usage of LTT-based devices as the submillimeter range detectors were discussed.
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Alexander E. Klimov, Alexander E. Klimov, Vladimir N. Shumsky, Vladimir N. Shumsky, "Far infrared and submillimeter range photosensitive devices based on Pb1-xSnxTe films: results and perspectives", Proc. SPIE 5964, Detectors and Associated Signal Processing II, 59640C (14 October 2005); doi: 10.1117/12.621603; https://doi.org/10.1117/12.621603
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