Paper
17 October 2005 Homogeneity of composition in evaporated Pb1-xGexTe thin films
B. Li, S. Y. Zhang, D. Q. Liu, F. S. Zhang
Author Affiliations +
Abstract
PbTe based semiconductors are well-known narrow gap IV-VI compounds, which are of interest due to potential application in the fabrication of photo-detectors in the mid- and far infrared spectral range. Among them, Pbl−xGexTe is known to have wider band gap than PbTe, which has been used to fabricate photo-detectors with shorter wavelength (λ<6.7 μm). However, the homogeneity of composition in evaporated Pbl−xGexTe thin films directly from bulk alloys has not been investigated. In the paper, we report the investigation that the homogeneity of composition on the surface was studied using energy-dispersive X-ray analysis (EDAX), and the compositional depth profiles was investigated using Auger electron spectroscopy (AES) in combination with argon ion sputtering. ASE depth profiling and characterization of details in the Ge concentration gradient is demonstrated.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Li, S. Y. Zhang, D. Q. Liu, and F. S. Zhang "Homogeneity of composition in evaporated Pb1-xGexTe thin films", Proc. SPIE 5964, Detectors and Associated Signal Processing II, 596410 (17 October 2005); https://doi.org/10.1117/12.625042
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Germanium

Tellurium

Lead

Thin films

Sputter deposition

Crystals

Profiling

Back to Top