19 October 2005 VUV spectrophotometry for photomasks characterization at 193 nm
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Abstract
This paper intends to develop a measurement system to characterize photomasks for 193 nm lithography applications. Based on the VUV spectrophotometer at the Fraunhofer IOF institute, some modifications have been addressed to fulfil these special measurements. Characterizations on photomasks have been successfully carried out, which show good correlations to simulations.
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Minghong Yang, Minghong Yang, Jork Leiterer, Jork Leiterer, Alexandre Gatto, Alexandre Gatto, Norbert Kaiser, Norbert Kaiser, Ingo Höllein, Ingo Höllein, Silvio Teuber, Silvio Teuber, Karsten Bubke, Karsten Bubke, } "VUV spectrophotometry for photomasks characterization at 193 nm", Proc. SPIE 5965, Optical Fabrication, Testing, and Metrology II, 59651L (19 October 2005); doi: 10.1117/12.625144; https://doi.org/10.1117/12.625144
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