19 October 2005 Optical metrology of binary arrays of holes in semiconductor media using microspot spectroscopic ellipsometry
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Abstract
Spectroscopic ellipsometry (SE) with microscopic measurement spot is applied to extract geometrical parameters of a bi-periodic array of holes patterned on the top of an Si wafer, namely the holes' diameter and depth, while the period of the patterning is assumed same as the value intended by the manufacturer. The SE response of the structure is simulated by the rigorous coupled-wave analysis implemented as the Airy-like internal reflection series, whose detailed description for the case of 2D gratings is provided with a brief demonstration of its convergence properties. The result of the extraction by SE is compared with results obtained by scanning electron microscopy (SEM) with reasonable agreement. The difference between some of the SE, SEM, and nominal parameters are discussed and the possibility to increase the accuracy of SE-based metrology is suggested.
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Roman Antos, Ivan Ohlidal, Jan Mistrik, Tomuo Yamaguchi, Stefan Visnovsky, Shinji Yamaguchi, Masahiro Horie, "Optical metrology of binary arrays of holes in semiconductor media using microspot spectroscopic ellipsometry", Proc. SPIE 5965, Optical Fabrication, Testing, and Metrology II, 59652B (19 October 2005); doi: 10.1117/12.624837; https://doi.org/10.1117/12.624837
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