15 September 2005 Photo-and current-induced crystallization of optical and electrical memory in phase change materials
Author Affiliations +
Proceedings Volume 5966, Seventh International Symposium on Optical Storage (ISOS 2005); 596606 (2005) https://doi.org/10.1117/12.649597
Event: Seventh International Symposium on Optical Storage (ISOS 2005), 2005, Zhanjiang, China
Abstract
On the excess Sb effect for the dynamics of rapid crystallization in eutectic amorphous films, the crystallization is described by the propagation of crystalline region with high velocity in the interface separating the crystalline and amorphous phase for InSb and AgInSbTe materials. From this analysis, it is clear that the crystallization is grown up in the boundary of crystalline-amorphous region of eutectic materials, which is different from the pseudo-binary compound GeSbTe media. Similarly, the current-induced crystallization can be investigated by the electron- phonon interaction. If a certain fraction of the valence band electrons are excited into the conduction band, the reaction of TA phonon take the stability of the crystal.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiro Okuda, Masahiro Okuda, Hirokazu Inaba, Hirokazu Inaba, Shouji Usuda, Shouji Usuda, } "Photo-and current-induced crystallization of optical and electrical memory in phase change materials", Proc. SPIE 5966, Seventh International Symposium on Optical Storage (ISOS 2005), 596606 (15 September 2005); doi: 10.1117/12.649597; https://doi.org/10.1117/12.649597
PROCEEDINGS
8 PAGES


SHARE
Back to Top