15 September 2005 4-level run-length limited optical storage on photo-chromic materials
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Proceedings Volume 5966, Seventh International Symposium on Optical Storage (ISOS 2005); 59660Y (2005) https://doi.org/10.1117/12.649644
Event: Seventh International Symposium on Optical Storage (ISOS 2005), 2005, Zhanjiang, China
Abstract
4-Level Run-Length Limited (4L-RLL) optical storage based on photo-chromic materials is firstly investigated in this paper to our knowledge. Unlike binary recording, information in Multi-Level Run-Length Limited (ML-RLL) modulation system is carried in both the amplitude and length of the marks. ML-RLL optical storage can increase the recording density and data transfer rate with no changes to the optical/mechanical unit. For photo-chromic materials, different levels of input laser power amplitude give rise to different reflection levels. Using optimal write strategies, a 4 level linear playback signal was obtained and the sigma-to-dynamic range (SDR) of the 4-level signal was calculated. The results show that the SDR is low enough to provide low bits error rate (BER).
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Heng Hu, Longfa Pan, Hua Hu, Duanyi Xu, "4-level run-length limited optical storage on photo-chromic materials", Proc. SPIE 5966, Seventh International Symposium on Optical Storage (ISOS 2005), 59660Y (15 September 2005); doi: 10.1117/12.649644; https://doi.org/10.1117/12.649644
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