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15 September 2005 Static recording characteristics of super-resolution near-field structure with bismuth mask layer
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Proceedings Volume 5966, Seventh International Symposium on Optical Storage (ISOS 2005); 596619 (2005) https://doi.org/10.1117/12.649658
Event: Seventh International Symposium on Optical Storage (ISOS 2005), 2005, Zhanjiang, China
Abstract
Static recording characteristics of super-resolution near-field structure with bismuth (Bi) mask layer and antimony (Sb) mask layer were investigated and compared. The experimental results show that Bi mask layer can also concentrate energy into the center of a laser beam at a low laser energy input similar to Sb, which may be because that Bi film exhibits giant nonlinearity at low laser intensity. The direct observation of laser-recording marks may help better understand the working mechanism of the super-RENS, super-resolution ablation, and other nonlinear switching phenomena.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Feng Zhang, Yang Wang, Wendong Xu, Xiumin Gao, and Fuxi Gan "Static recording characteristics of super-resolution near-field structure with bismuth mask layer", Proc. SPIE 5966, Seventh International Symposium on Optical Storage (ISOS 2005), 596619 (15 September 2005); https://doi.org/10.1117/12.649658
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